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Professor John E. (Jack) Rowe received his PhD in 1971, having already joined Bell Laboratories as a member of technical staff in 1970 in Homer D. Hagstrum’s Department where he learned Photoemission Spectroscopy on Semiconductor surfaces. He became Department head there in 1980 and in 1983 joined the Physics Department of the University of Florida as a Professor co-leading a newly formed program in Microelectronics and Material Physics. After two years Rowe returned to Bell Labs until leaving in 1996 to take a position with the Army Research Office (ARO) in RTP, North Carolina. While at ARO Rowe was the most cited scientist in the U.S. Army (over 5500 citations) and an Army Research Lab (ARL) Fellow. He also became an Adjunct professor of Physics at NC State in 1996, continuing this and his ARO position until 2004 when he joined the UNC Chemistry Department as founding Deputy Director of the Institute for Advanced materials (IAM). After three and a half years Rowe returned full-time to his current position at NC State.
Professor Rowe is best known for his extensive photoemission studies of semiconductor and metal surfaces using Synchrotron Radiation and in 2011 he was awarded the Albert Nerken Prize of the AVS for " for his fundamental role in the development of electron energy loss spectroscopy, photoemission and synchrotron radiation techniques and their applications to surface and interface studies.” While at ARO, Rowe was a Distinguished Visiting Professor, Rutgers University. At various times he was also North American Editor, Applied Surface Science, a member of the editorial board of JVST, Rev Ssi Instruments, and an active member of AVS its MSTG, and a fellow of APS, AVS and AAAS. Rowe has used novel approaches to photoemission spectroscopy and microscopy of semiconductor surfaces, spintronic materials, and complex oxides and transition-metal surfaces; he is now using synchrotron radiation photo-emission studies to determine electronic structure and bonding of ultra-thin transition-metal oxides and silicates, as well as other oxide and oxy-nitride interfaces on Si(100) and Si(111). He has also studied model bimetallic catalyst systems, i.e., Pt, Pd, Au and Ir films on W(211) and Ir(111) with high resolution photoemission at the Brookhaven NSLS. Most recently, Rowe has pursued research interests in synchrotron measurements of conducting carbon, graphene, diamond, fullerene films and carbon nanotubes for electronics applications.
Honors and Awards
- 1983 Fellow of the American Physical Society
- 1992 Fellow of the American Vacuum Society
- 2005 Fellow of the American Association for the Advancement of Science
- 2011 Nerken Award for Synchrotron Research from the AVS
Toward Single Crystal Hybrid-Carbon Electronics: Impact of Graphene Substrate Defect Density on Copper Phthalocyanine Film Growth
T. McAfee, E. Gann, T. Guan, S.C. Stuart, J.E. Rowe, D.B. Dougherty, and H. Ade
Crystal Growth & Design, Volume 14, (2014), 4394, doi:10.1021/cg500504u
Coverage Dependent Surface Magnetism of Iron Phthalocyanine on an O-Fe(110) Surface
D.B. Dougherty, A. Sandin, E. Vescovo, and J.E. Rowe
Phys. Rev. B, Volume 90, (2014), 045406, doi:/10.1103/PhysRevB.90.045406
Improved Graphene Growth in UHV: Pit-free Surfaces by Selective Si Etching of SiC (0001)-Si with Atomic Hydrogen
A Sandin, JE Rowe, DB Dougherty
Surface Science, Volume 611, (2013), 25, doi:10.1016/j.susc.2013.01.010
Multiple coexisting intercalation structures of sodium in epitaxial graphene-SiC interfaces
Sandin, Dougherty, Nardelli.
Phys. Rev. B, 85, (2012), 125410, doi:10.1103/PhysRevB.85.125410
Characterization of Few Layer Graphene films Grown on Cu, Cu-Ni and SiC Substrates
Nelson, Diebold (SUNY, Albany), Sandin, Dougherty, Aspnes
J. Vac. Sci. Technol. B, 30, (2012), 04E106, doi:10.1021/nn202643t
Aberration Corrected Microscopy of CVD Graphene and Spectroscopic Ellipsometry of Epitaxial Graphene and CVD Graphene for Comparison of the Dielectric Function ?
Florence Nelson, Dhiraj Prasad, Everett Comfort, Ji Ung Lee, Alain C. Diebold, Juan-Carlos Idrobo, (SUNY, Albany) Andreas Sandin, Daniel Dougherty, David Aspnes, and Jack Rowe
Journal of Electrochemical Society, 45 (4), (2012), 63-71, doi:10.1149/1.3700453
Optical and Structural Characterization of Epitaxial Graphene on Vicinal 6H-SiC(0001)-Si by Spectroscopic Ellipsometry, Auger Spectroscopy, and STM
Nelson, Diebold (SUNY, Albany), Sandin, Dougherty, Aspnes.
JVST B, (2012), doi:10.1116/1.4726199
Incomplete screening by epitaxial graphene on the Si face of 6H-SiC(0001)
Sandin, A., Pronschinske, A., Rowe, J. E., & Dougherty, D. B.
Applied Physics, Letters, (2010), 97(11), doi:10.1063/1.3484966
Surface reconstruction of hexagonal Y-doped HoMnO3 and LuMnO3 studied using low-energy electron diffraction
Vasic, R., Sadowski, J. T., Choi, Y. J., Zhou, H. D., Wiebe, C. R., Cheong, S. W., Rowe, J. E., & Ulrich, M. D.
Phys Rev B, 81(16), (2010), doi:10.1103/PhysRevB.81.165417
Titanium suicide islands on atomically clean Si(100): Identifying single electron tunneling effects
Tedesco, J. L., Rowe, J. E., & Nemanich, R. J.
Journal of Applied Physics, 107(12), (2010)