Title: Computational Challenges for Spintronic and Spinlogic

Abstract: The fast-growing need to preserve, process, and manipulate an ever-increasing volume of data has led to groundbreaking discoveries in many different areas, including the field known as spintronics. Spintronics is short for spin transfer electronics, which exploits in addition to the electron charge the quantum mechanical electron spin. Tremendous progress has been made especially in the field of data storage. For example, the so-called spin-transfer-torque magnetic random access memory (STT-MRAM) is already commercially available. However, only slow progress has been made in the field of spinlogic devices. Recent attempts for example in the field of spin-orbitronics show a promising path to new spinlogic devices. Here in addition to the symmetric exchange coupling its antisymmetric counterpart, known as Dzyaloshinskii-Moriya interaction (DMI), is used to create topologic protected magnetic objects, also known as skyrmions. Their topology might offer new ways to create combinations of spintronic and spinlogic devices. Therefore, functional materials with optimized properties, such as the magnetic anisotropy, magnetic relaxation rate, and the symmetric and antisymmetric exchange interaction are crucial for the next generation of spintronic devices. In this talk, I will highlight different challenges regarding the next generation of spintronic and spinlogic devices and discuss the complex interplay of different material parameters within a confined device setting and its effect on the device functionality. Part of this research is supported by DARPA (D18AP00011), NSF (CAREER 1452670) and NASA (CAN80NSSC18M0023).